Quantitative phase profilometry (QPP) has been recently developed for mapping the thickness profiles of thin films. However, the insufficient signal-to-noise ratio (SNR) has hindered its applicability on thinner structures, e.g., monolayer graphene. Here, we propose and implement a “phase cavity” concept in QPP to amplify the measured phase signal to achieve high contrast and accurate thickness profiling of thin structures. We achieved phase amplification by modulating the oxide film thickness on the silicon substrate and optimizing the illumination wavelength. We obtained the exact thickness profile of monolayer graphene and confirmed it with Raman spectroscopy and atomic force microscopy.
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