Third-generation semiconductor SiC has the advantages of large band gap, fast carrier saturation migration speed and high critical breakdown electric field strength. These characteristics make SiC based electronic devices modification technology an important research significance in the field of high-performance light-emitting devices, high power and high-frequency devices. However, due to wide bandgap and complex surface state of SiC, the regulation of its luminescent properties and fabrication of excellent Ohmic contact with SiC/metal interface are always difficult that significantly influence the working performance and development in SiC devices. In this paper, we introduce the mechanism of light-emission regulation in broad band of blue and ultraviolet/white light photoluminescence by high energy laser irradiation on SiC single crystal surface. Studies determine that surface modification mechanism of laserinduced C-atomic defect state for electrical transmission and improvement of electrical contact performance of SiC surface.
In this paper, enhancement of Aluminum doping profile in semi-insulating 4H-SiC by using Eximer laser in AlCl3 aqueous solution is focused. Several active parameters like number of shots, laser power and dopants solution density affect the doping mechanism. Laser doping with increase of AlCl3 solution concentration from 28 to 36 wt.% results in more efficient doping with merging features like better ohmic contact formation having ideal symmetry factor. Hall Effect measurement using Van der Pauw method show that laser produces a highly doped p-type layer with increasing carrier concentration from 1012/cm2 to a maximum 1015/cm2 by tuning parameter . Current-Voltage characteristics of modified region show the ohmic behavior with reduction in resistance. UV spectrometer absorption tangent line shifts from 375 nm to 401 nm indicating that Al impurity has been introduced in 4H-SiC.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.