The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies are investigated in a temperature range 17 °C – 97 °C. We demonstrate lasers with a reduced threshold current using direct n-doping (during the dot formation) in the active region compared lasers with a nominally undoped active region. We explain results using calculations of the dot and wetting layer potentials and the electron and hole energy levels.
We report temperature dependent optical modal gain and absorption features as function of injection current of 1.55 μm InAs Q-Dash laser with an InAs/InAlGaAs/InP structure monolithically grown on (001) silicon substrate. Board-area multi-segmented contact devices were fabricated and driven by pulsed current. Net modal gain and absorption was obtained by measuring amplified spontaneous emission using the variable stripe-length method. From 20˚C to 80˚C, the changes in maximum gain and gain bandwidth were studied and a redshift in peak gain wavelength was observed. Quantum confined Stark effect was measured under reversed bias from -1 V to -7 V.
We demonstrate tunable, polarization-dependent, dual-color plasmonic filters based upon arrays of asymmetric cross-shaped nano-apertures. Acting as individual color emitting nano-pixels, each aperture can selectively transmit one of 2 colors, switched by controlling the polarization of white-light incident on the rear of each pixel. By tuning the dimensions of the pixels we build a polarization sensitive color palette at resolutions far beyond the diffraction limit. Using this switchable color palette we are able to generate complex optical surfaces encoded with dual color and information states; allowing us to embed two color images within the same unit area, using the same set of nanoapertures.
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