InAs0.02Sb0.82N0.16 thick epilayers have been grown on InAs substrates by melt epitaxy (ME) technology. Fourier transform infrared (FTIR) transmission spectra showed that the cutoff wavelength of InAs0.02Sb0.82N0.16 samples grown by ME is 10.0 μm indicating the band gap narrowing. The thickness of the epilayers grown by ME observed by scanning electron microscopy (SEM) reaches 183 μm. X-ray diffraction (XRD) measurements confirmed that the epilayers are single crystals. The full-width at half-maximum (FWHM) of InAs0.02Sb0.82N0.16 (400) CuKα1 diffraction peak is 298.8 arcsec. The high quality of the crystals benefits from the thickness of the epilayers exceeding 100 μm, which significantly suppresses the effect of the lattice mismatch between InAs0.02Sb0.82N0.16 epilayers and InAs substrates. Energy dispersive spectrometer (EDS) attached SEM measurements revealed that 16% nitrogen has been incorporated in the epilayers.
InAs0.92Sb0.08 and InAs0.06Sb0.94 epilayers have been grown on InAs substrates by liquid phase epitaxy (LPE) and melt epitaxy (ME) respectively. InAsSb epilayers grown by LPE and ME have been firstly observed by a high temperature laser scanning confocal microscopy (LSCM) . X-ray diffraction (XRD) measurements confirmed that the lattice constant of InAs0.92Sb0.08 epilayers grown by LPE is 6.0912 Å, while that of InAs0.06Sb0.94 epilayers grown by ME is 6.4520 Å. Uncooled photoconductors were fabricated using InAs0.06Sb0.94 thick epilayers grown by ME. The photoresponse wavelength range of InAs0.06Sb0.94 detectorsis 2-10 μm. At 295 K, the peak detectivity Dλp* is 3.59 × 109 cm Hz1/2W-1 at the wavelength of 6.5 μm, and the detectivity D* is 1.0 × 109 , 2.1 × 108 and 1.0 × 108 cm Hz1/2W-1 at 8, 9 and 10 μm for the detectors with Ge immersion lenses respectively
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.