KEYWORDS: Signal to noise ratio, Free space optics, Receivers, Turbulence, Transmitters, Telecommunications, Modulation, Laser sources, Systems modeling, Forward error correction
In free space optical communication (FSO) communication, it is assumed that the fading due to atmosphere turbulence (AT) is uncorrelated at the receiver. But, in practice the spacing between the receivers is less than the fading correlation length. So, we have to consider a correlated statistical model for FSO AT model. In this paper, we have analyzed space shift keying (SSK) modulation scheme over correlated Gamma-Gamma (GG) fading model. We have derived an average bit error rate (ABER) using moment generating function (MGF) for space shift keying modulation scheme over correlated Gamma-Gamma (GG) fading model. The system is analyzed for different atmospheric conditions, correlation values and different number of receivers. It can be observed that as we increase the correlation value, the ABER value deteriorates. It can be observed that the ABER does not depend on turbulence at low SNR, but for high SNR the ABER performance improves and the ABER performance is approximate same in weak and moderate turbulence. However, the difference of SNR between moderate and strong turbulence is approximate 5 dB for ABER value of 10−4. We note that at a given SNR, the ABER improves as we increase the number of receivers. Also, it can be observed that the ABER deteriorates as correlation increases for same number of receivers. We have also analyzed the system both uncoded and LDPC coded SSK transmitter systems. It is observed that for ABER value of 10−4, the SNR difference between LDPC coding and without encoding is approximate 3 dB.
We present a copper indium gallium selenide (CIGS) solar cell with improved performance, numerically simulated using LUMERICAL FDTD and DEVICE Multiphysics simulation software and considering the charge transportation, ambient temperature, buffer layer thickness, and defect density for detailed analysis. One of the significant concerns of the existing CIGS solar cells is the presence of the toxic cadmium sulfide (CdS) buffer layer and higher buffer/absorber layer interface dominant recombination. Replacing CdS with zinc sulfide (ZnS) is a propitious way to address such issues and enhance the CIGS solar cell’s performance while achieving efficiencies similar to that of the CIGS solar cell with CdS as the buffer layer. Furthermore, the performance is improved by employing a transparent conductive oxide of fluorine-doped tin oxide (FTO) and zinc tin oxide (ZTO) window layer for better charge flow and low-current losses. However, the real solar cell operating conditions are entirely different from the predefined standard conditions. To get a more detailed analysis, we demonstrate the impact of variations of operating temperature, ZnS buffer layer thickness, defect density on the short-circuit current, open-circuit voltage, and overall performance of the solar cell. We found that the simulated efficiency of the proposed CIGS solar cell (FTO–ZTO/ZnS/CIGS/Mo) with ZnS and FTO–ZTO layer is 29.6% with a short-circuit current of 49.3 mA / cm2, higher than that of the CIGS solar cell (Al:ZnO/CdS/CIGS/Mo) with CdS that was achieved in our previous work. Thus the study can help to develop a more promising, efficient, and cost-effective CIGS solar cell.
The interference method is used to achieve all-optical logic gate operations. This has been realized with a single design of photonic crystal ring resonator at different wavelengths rather than designing separate for all the logic gates. Such a single design can be used to perform all optical operations as AND, OR, and XOR logic gates at different wavelengths. Further operating wavelength, contrast ratio (CR), response time (RT), and bit rate have been analyzed for all three logic gates. The highest CR is obtained as about 22.06 dB with fast RT about 0.14 ps and high bit rate of 7.14 Tb / s for proposed XOR logic gate in comparison to all the other logic gates with single-design structure, which may lead us to construct on-chip logic circuits.
In this work, we present the performance analysis of the Cu(InGa)Se2 (CIGS) thin-film solar cell by exploring the physics of varying CIGS thickness, bandgap, and the device temperature. The thickness optimization of the CIGS layer is important as this lowers the large-scale manufacturing cost and eliminates the issues associated with the handling of bulky conventional solar cells. The chalcopyrite CIGS material bandgap varies from 1eV to 1.7 eV depending upon the value of ‘x’ in the formula CuIn1-xGaxSe2. The bandgap can be engineered by varying the gallium (Ga) and indium (In) composition in CuIn1-xGaxSe2. The structure is numerically simulated using the SCAPS-1D code. We investigate how the photovoltaic parameters of the solar cell such as Voc, Jsc, FF, and η are affected by varying the thickness of the absorber layer ranging from 1m to 2μm and bandgap value from 1 eV to 1.7 eV. Further, we demonstrate how the performance of this chalcopyrite material based solar cell varies with the increase in the temperature ranging from 300- 360K. By detailed understanding, we anticipate that an efficient CIGS solar cell can be developed in the future.
The paper demonstrates the design, simulation, fabrication, and analysis of InGaN/GaN superlattice (SL) solar cell with photonic crystal (PhC) structure at the top surface. Ten pairs of In0.18Ga0.82N / GaN structure were grown by metal organic chemical vapor deposition technique and had been used as an absorbing layer for solar cell device. PhC light-trapping structure (LTS) was prepared with the top indium tin oxide and p-GaN layers. Both simulation and experimental results demonstrate that PhC LTS structure considerably enhances the efficiency of solar cells. The simulation parameters were optimized and calculated using rigorous-coupled wave analysis method. The experimental studies under 1-sun illumination at standard test conditions exhibit efficiency enhancement of 59% compared to SL structure without PhC LTS.
A flexible hybrid wavelength division multiplexing-time division multiplexing passive optical network architecture that allows dual rate signals to be sent at 1 and 10 Gbps to each optical networking unit depending upon the traffic load is proposed. The proposed design allows dynamic wavelength allocation with pay-as-you-grow deployment capability. This architecture is capable of providing up to 40 Gbps of equal data rates to all optical distribution networks (ODNs) and up to 70 Gbps of a asymmetrical data rate to the specific ODN. The proposed design handles broadcasting capability with simultaneous point-to-point transmission, which further reduces energy consumption. In this architecture, each module sends a wavelength to each ODN, thus making the architecture fully flexible; this flexibility allows network providers to use only required OLT components and switch off others. The design is also reliable to any module or TRx failure and provides services without any service disruption. Dynamic wavelength allocation and pay-as-you-grow deployment support network extensibility and bandwidth scalability to handle future generation access networks.
In this paper, the proposed switch of T-type based on photonic crystal ring resonator has been studied. The proposed structure is composed of two waveguides, between them the photonic crystal ring resonator is placed. Our structure can switch two wavelengths together following an external effect. The proposed design has a simple geometric shape, therefore it is capable to realize optical switch applicable to photonic integrated circuits. The parameters that can characterized the performance of optical device are quality factor, crosswalk and foot print. The values of crosstalk, quality factor and footprint that have been obtained are – 41.5db, 330 and 89.38 μm2, respectively, which are superior to earlier reported values. The finite different time domain (FDTD) and plane wave extended (PWE) methods are used to calculate the outputs spectrum and band gap, respectively.
The structure of p-i-n InGaN/GaN based solar cell having a photonic crystal (PhC)-based light trapping structure (LTS) at the top assisted by the planar metallic (aluminum) back reflector (BR) is proposed. We propose two different designs for efficiency enhancement: in one we keep the PhC structure etching depth extending from the top antireflective coating (ARC) of indium tin oxide (ITO) up to the p-GaN layer (which is beneath the ITO and above the active layer), whereas in the other design, the PhC LTS etching depth has been extended up to the InxGa1−xN absorbing layer, starting from the top ITO layer. The theoretical optical simulation studies and optimization of the required parameters of the structure, which help to investigate and demonstrate the effectiveness of the LTS in the efficiency enhancement of the structure, are presented. The work also demonstrates the Lambertian light trapping limits for the practical indium concentrations in a InxGa1−xN active layer cell. The paper also presents the comparison between the proposed designs and compares their results with that of a planar reference cell. The studies are carried out for various indium concentrations. The results indicate considerable enhancement in the efficiency due to the PhC LTS, mainly because of better coupling, low reflectance, and diffraction capability of the proposed LTS, although it is still under the Lambertian limits. The performance evaluation of the proposed structure with respect to the angle of incident light has also been done, indicating improved performance. The parameters have been optimized and calculated by means of rigorous coupled wave analysis (RCWA) method.
High birefringence and large mode area are the two paramount requirements of single-mode fibers to control polarization mode dispersion and nonlinear effects. We have investigated the birefringence, higher-order mode coupling loss of a fundamental mode (FM), and numerical aperture of index-guiding segmented cladding photonic crystal fibers in continuation to our previous analysis of the design for FM confinement and V parameter. High birefringence on the order of 10−4 to 10−3 over the near-infrared to short-wavelength infrared (0.75 to 2.3 μm) spectral range has been obtained. The finite difference time domain method has been used for simulation. The center defect in the lattice forms the core and the remaining part represents the cladding. With phosphate glass (ngl=1.56) as a base material, cladding consists of different segments formed by varying the air hole diameter resulting in strong form birefringence and reduced numerical aperture which leads to a large mode area. We inferred a relation between fiber symmetry and birefringence by varying the duty cycle of the designs. A significant reduction in beat lengths shows reduced power losses in the FM due to higher-order mode coupling.
We propose and evaluate a 2-D photonic crystal waveguide with a single line defect that uses rectangular holes adjacent to waveguide, arranged in a hexagonal geometry. With an aspect ratio of 2:1 in rectangular holes, we obtained transmission efficiency of 94% which is larger than previously reported for its circular and elliptical counterpart. By controlling the single parameter of rectangular air hole, the slow light performance of the improved efficiency structure is analyzed. In the irregular waveguide, slow light is achieved with low group velocity and very low group velocity dispersion over large signal bandwidth of 23 GHz. The normalized delay bandwidth product (NDBP) for the proposed design is also measured and compared with NDBP of waveguide when instead of rectangular holes, elliptical holes is used adjacent to waveguide with same aspect ratio 2:1. Improvement in normalized delay bandwidth product is obtained for our proposed design when elliptical air holes of aspect ratio 2:1 adjacent to waveguide are replaced by rectangular holes of same aspect ratio.
In this paper, we propose a relatively new PCF structure made of silica with a very high nonlinearity i.e. γ~343 W-1 km-1@1060 nm. We have also demonstrated two-octave spanning supercontinuum generation from 500 nm – 1680 nm using 50 fs pulse with peak power of 2 kW.
Modeling and detailed performance analysis is carried out to realize a multimode interferometer optical switch by inserting an appropriate image-modulated (IM) region. The concept of self-imaging characteristics of multimode waveguides has been utilized in order to drive the designed device as a photonic switch. Transition losses in the waveguides of the structure are maintained at low levels by selecting appropriate dimensions to increase overall performance of the switch. It has been observed that by inserting an additional IM region, switching losses and corresponding crosstalk levels can be reduced significantly. The device performance is checked for a wider range of index variation in the IM region with respect to other regions for a test wavelengh of 1.55 µm. With rigorous and repetitive simulation, a crosstalk level better than -22.2 dB for either case of polarization state (transverse electric and transverse magnetic) of input has been achieved. The design also possesses a design tolerance in the range of ±0.25 to ±0.5 μm, within which variation in the imaging length and its subsequent adverse effects on device performance remains less than 1.5%.
We propose a new design for slow-light photonic crystal W1 waveguide, which uses a combination of circular and elliptical air holes arranged in a hexagonal lattice with background material of refractive index n = 2.84. Large value of normalized delay bandwidth product (NDBP = 0.3708) is obtained. We have also analyzed dispersion property for the structure and achieved nearly "zero-dispersion" for a very large bandwidth. Our proposed photonic crystal waveguide has slow light applications such as reduction in length and power consumption of all-optical and electro-optic switches at optical frequency.
Modelling of a compact and completely non-blocking 4×4 optical switch utilizing integrated multi-mode interference (MMI) waveguides with a channel profile of Ti-indiffused Lithium Niobate is described. Design novelty lies in its satisfactory operation for two wide optical windows (100 nm each), with center wavelengths (λcentre) of 1.3 and 1.55 µm, possessing low losses. For either of these windows, the average value of propagation losses are maintained lower than 1 dB with a vacillation of extremely low polarization dependent losses ( ≤ 0.15 dB). Index tuned regions are optimized to achieve average crosstalk levels better than −19 and −12 dB for its operation in the wavelength range of 1.25 to 1.35 µm and 1.50 to 1.60 µm, respectively. It is also observed that switch possess absolute loss uniformity (of the range of 0.5% to 1.6%) with a maximum of ±2.5% tolerance in the structural parameters.
This paper describes the modeling of a 2×2 multimode interference (MMI) switch, with a channel profile of
Titanium indiffused Lithium Niobate. Design novelty lies in its satisfactory operation for two wide optical
windows (100nm each with centre wavelengths, λcentre of 1.3 μm and 1.55 μm) with low switching losses and
crosstalk levels. Index tuned regions are optimized to achieve crosstalk levels of ≥ -18 dB and ≥ -14 dB for its
operation in the wavelength range of 1.25 μm - 1.35 μm and 1.50 μm - 1.60 μm respectively. For either of
these wavelength ranges, the switch losses (excess and insertion losses) are maintained lower than 1 dB.
An optical Miller coding scheme is proposed with the help of high speed electrical logic gates. With both Miller and Manchester being from the same family of code, i.e., 1B/2B, the former has less electrical spectrum compared with that of Manchester coding and thereby demonstrates a relatively higher tolerance against fiber dispersion within a certain range of distance. The applicability of this code in optical communication has not been explored adequately by the researchers until now, despite its advantages. Here we have investigated the dispersion tolerance of this code and found it to be nearly 1.2 times that of Manchester coding. The dispersion tolerance of Miller code obtained is from −306.4 to +263.9 ps/nm at 1 dB power penalty.
We present results for a broadband supercontinuum spanning almost two octaves (575 nm - 1600 nm) generated in
an equiangular spiral photonic crystal fiber proposed earlier. The pump source is taken to be Yb - doped fiber laser at 1.06
μm. The fiber has two zero dispersion wavelength (at 885 nm and 1115 nm) with very high nonlinearity ( >5580 W-1 km-1 at 1060 nm).
A diffusion process controlled modelling of Titanium-indiffused Lithium Niobate (Ti: LiNbO3) channel waveguides
(of μm dimension) for Machzehnder Interferometer (MZI) switch has been presented. The effect of various
indiffusion process parameters e.g. dopant strip thickness, lateral and vertical diffusion length on the insertion loss has
been taken care of, to reduce the switch losses. Transition losses in the curved waveguides of the structure are also
minimized by selecting low loss bend structures to increase overall performance of the switch. The computed results
for switch performance are in good agreement with the published data.
This paper reviews the development of hydrogen silsesquioxane nanostructures (sub-100nm) on a silicon platform.
The effect of HSQ resist in thick (128nm thick resist) and thinner state (30nm thick resist) has been demonstrated and
minimum possible structures with these are discussed in details. Most applicable structures like straight lines/spaces,
sharp joints/corners and dots were developed to investigate the effects of development time on the lithography
properties of HSQ. Soft bake after spinning process had been avoided in view of achieving better contrast and stable
resist deposition. We had also reached to a conclusion that increasing the development time could improve resist
contrast and pattern resolutions up to certain limits but may vary with type of structures and other conditions.
The two dimensional Photonic crystal fiber (PCF) with a triangular lattice cross-section pattern of circular air hole
is investigated for four and five layer by the use of finite difference time domain (FDTD) method to investigate the
single mode property and the effect on it by increasing the number of layer as well as by varying the air hole diameter.
In this paper, design of an all-optical switch using MZI switching elements with SOA's and its works performance is
explained. The effect of variations of output power with respect to control signal wavelength, data signal power and control
signal power are examined and plotted. Also the optical spectrum and time domain analysis has been done to demonstrate its
operational features.
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