Quantum efficiency measurement of luminescence glasses for high-power white LED was investigated. Luminescence
glasses have transparent and anisotropic characteristics, for this reason, we adopted an integrating sphere with 20cm
diameter which was connected to a CCD spectrometer to obtain fluorescence spectra of the sample. The relative spectral
intensity distribution of the sample under the light source excited was derived from the measured spectra firstly, then
using the standard halogen lamp to calibrate the system, we got the absolute spectral intensity distribution, finally the
quantum efficiency of the sample can be calculated based on the distribution. It provides an accurate method to measure
the luminescence materials’ emission characters.
The double-side patterned sapphire structure was proposed to improve the light extraction efficiency (LEE) of flip-chip
GaN-based light-emitting diodes (LEDs). The influences of sapphire substrate thickness, pattern shapes and sizes on
LEE were analyzed by Monte Carlo simulation method. Using silicon oxide as mask membrane, double-side patterned
sapphires were processed by the standard lithography and the reaction-ion-etching (RIE) technology. The LEDs with
patterned sapphire were packaged. The measured light outputs of LEDs verified our predicted effects.
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