ASML NXE:3400 and NXE:3600D scanners are now commonly used for High Volume Manufacturing (HVM) of 7 nm to 3 nm logic devices as well as 10 nm class memory devices. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity
Furthermore, we will describe the latest technology supporting the ASML roadmap for further improving cost of technology via increased productivity and share system qualification and performance data of the next HVM scanner, the NXE:3800E.
Lastly the ASML NXE sustainability roadmap showing progress and steps towards a significant reduction in energy consumption per wafer exposure on NXE systems will be presented.
ASML NXE:3400 and NXE:3600D scanners are firmly embedded in High Volume Manufacturing (HVM) of 7 nm to 3 nm logic devices as well as 10 nm class memory devices. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will describe the latest technology supporting the ASML roadmap for further improving cost of technology via increased productivity and share system qualification and performance data of the next HVM scanner, the NXE:3800E.
Lastly the ASML NXE sustainability roadmap showing progress and steps towards a significant reduction in energy consumption per wafer exposure on NXE systems will be presented.
ASML NXE (0.33 NA) scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5 nm logic devices as well as 1z memory node devices. In 2021, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and 1a and 1b memory nodes. This system has entered the HVM phase and is shipping in volume. In this paper we will share the latest performance, with excellent imaging, overlay and productivity results. For the latter we will show record performance of 185 Wafers per Hour at dose 30mJ/cm2 and over 3000 Wafers per Day at customer. Furthermore, we will address the ASML roadmap and introduce the NXE:3800E scanner. The NXE:3800E will first ship in the fourth quarter of 2023, targeting the 2 nm logic node. Lastly, ASML will show its carbon footprint and energy reduction roadmap.
ASML NXE:3400 and NXE:3600D scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm to 3nm logic devices as well as 10nm class memory devices. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
ASML NXE:3400 scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5nm logic devices as well as D1z memory devices. In 2021, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and D1a and D1b nodes. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
ASML NXE:3400 scanners are now commonly used for High Volume Manufacturing (HVM) of 7nm and 5nm logic devices as well as D1z memory devices. This year, ASML has introduced the NXE:3600D scanner to the market, targeting 3nm logic and D1a and D1b nodes. In this paper we will share the latest performance of these systems, including excellent overlay, critical dimension (CD) control, stability, reliability, and high productivity.
Furthermore, we will address the ASML roadmap for meeting the requirements for the 2 nm node and beyond.
0.33 NA EUV scanners are being used for High Volume Manufacturing. In this paper we will give an update on the performance improvements of the NXE:3400 systems related to the lithographic performance, productivity and uptime.
Finally we look at future system improvements to meet requirements for the 3 nm node and beyond.
In 2019 we have seen the first 7 nm logic devices, manufactured on ASML NXE:3400 scanners, hitting the market. In this paper we will give an update on the performance improvements to further optimize these systems for High Volume Manufacturing (HVM), related to the lithographic performance, productivity and uptime.
We will also demonstrate that for the 5 nm logic node and 10nm-class DRAM, excellent overlay, focus, and critical dimension (CD) control have been realized. In combination with intrinsic tool stability and holistic control schemes, including (resist and tool) performance improvements addressing stochastics issues, this provides the required performance for HVM for these nodes.
Finally we will discuss the ASML roadmap for meeting the requirements for the 3 nm node and beyond.
With the introduction of its fifth-generation NXE:3400B scanner, ASML brought EUV to High- Volume Manufacturing for 7 nm node lithography and beyond with full support of pellicle. This paper presents an update on lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour. Advances in source power and system availability have enabled a continued increase of productivity. To maximize the number of yielding dies per day excellent Overlay, Focus, and Critical Dimension (CD) control have been realized, combining intrinsic tool stability with holistic control schemes. We will also show matching performance for both Overlay and Imaging, and further improvements in Focus Process Dependencies for the 5nm node.
This presentation will provide an overview of the industrialization of EUV Lithography, including the latest data on imaging, overlay, defectivity and source power/ productivity.
The focus of the presentation will be on the NXE:3400B scanner, ASML’s fifth generation EUV lithography tool intended for the sub 10 nm volume production
Furthermore the ASML roadmap, NXE:3300B and NXE:3350B field data and field performance data will be shown
With the introduction of its fifth-generation EUV scanner, the NXE:3400B, ASML has brought EUV to High-Volume Manufacturing for sub-10nm node lithography. This paper presents lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour (or wph).
Advances in source power have enabled a further increase of tool productivity requiring an associated increase of stage scan speeds. To maximize the number of yielding die per day a stringent Overlay, Focus, and Critical Dimension (CD) control is required. Tight CD control at improved resolution is obtained through a number of innovations: the NXE:3400B features lower aberration levels and a revolutionary new illumination system, offering improved pupil-fill ratio and larger sigma range. Overlay and Focus are further improved by implementation of a new wafer clamp and improved scanner controls.
The NXE:3400B also offers full support for reticle pellicles.
NXE:3300B scanners have been operational at customer sites since almost two years, and the NXE:3350B, the 4th generation EUV system, has started shipping at the end of 2015. All these exposure tools operate using MOPA pre-pulse source technology, which enabled significant productivity scaling, demonstrated at customers and at ASML. Having achieved the required throughput to support device development, the main priority of the ASML EUV program has shifted towards improving stability and availability. Continuous progresses in defectivity reduction and in the realization of a reticle pellicle are taking place at increased speed. Today’s overlay and imaging results are in line with the requirements of 7nm logic devices; Matched Machine overlay to ArF immersion below 2.5 nm and full wafer CDU performance of less than 1.0nm are regularly achieved. The realization of an intensity loss-less illuminator and improvements in resist formulation are significant progress towards enabling the use of EUV technology for 5nm logic devices at full productivity. This paper will present an overview of the status of the ASML EUV program and product roadmap by reviewing the current performance and on-going developments in productivity, imaging, overlay and mask defectivity reduction.
Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE:3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4th generation EUV system, the NXE: 3350, is being qualified in the ASML factory.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.