In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.
In this paper, we will discuss the characteristics of the flexible sandwich electrode. We fabricate the MoO3/Ag grids/MoO3 via thermal deposition method. We will measure the bending test and the optical and electric characteristics. The conclusion of the MoO3/Ag grids/MoO3 will compare with the MoO3/Ag film/MoO3 and ITO flexible electrodes. This sandwich electrode will increase the transmittance by less silver coverage but the MoO3/Ag grids/MoO3 have lower sheet resistance compared with MoO3/Ag film/MoO3. Therefore, we propose this new electrode structure is proper for application of OLEDs.
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