We have investigated different growth conditions of AlGaAs and InGaAs quantum wells (QWs) by metal organic chemical vapor deposition (MOCVD) for applications in high-power laser diodes emitting at 980nm. According to different experimental results measured by Photoluminescence (PL), we optimized the growth conditions. Growth temperature, V/III ratio, growth interruption and spacer time have been studied in detail. We have found the optimal growth conditions for laser diodes emitting at 980nm grown by metal organic chemical vapor deposition (MOCVD). As for our experiments, the best suitable growth temperature of AlGaAs and InGaAs QWs was 700°C and 600°C, respectively. The growth procedure of laser diodes should include growth interruption and spacer layers surrounding QWs. V/III ratio was about 130 during the growth of QWs.
The effect of intermixing in change InGaAs/AlGaAs quantum well structure using impurity-free vacancy disordering (IFVD) technique was investigated. Through the experiment we found that the magnitude of the blue shift changes with the annealing time and the thickness of the dielectric layer. The thicker dielectric layer under the same annealing temperature to withstand the longer, the larger blue shift we got. Cycle-annealing in high temperature for short time to ensure that quantum well were intermixing evidently under the condition of no obvious damage. 46 nm blue shift have been achieved by applying a cycle-annealing at 850°C in 6 minutes for 5 cyclesand the PL peak keep more than 80% of the as-grown sample. Finally, we found that the dielectric film of Si3N4 can suppress intermixing and protect the quality of the samples as the protective film.
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