Lasers are often used to process materials. For example, crystallization of amorphous semiconductor can be induced by having laser light interact with the semiconductor and having amorphous semiconductor undergo a liquid-solid phase transition – laser-induced crystallization. While laser-induced crystallization is predominantly utilized in preparing thin films made of such single chemical elements as silicon and germanium, extending its use for semiconductors that contain multiple chemical elements (e.g., metal oxides) unfolds applications that have yet to be envisioned. In this paper, a continuous-wave laser diode with a micrometer-scale chevron-shaped beam profile – micro-chevron laser beam (μ-CLB) – was exploited to convert amorphous CuO thin films prepared on fused silica substrates into single-crystal Cu2O stripes under various crystallization conditions. The dependence of the crystallization on laser power density and laser scan rate was investigated by Raman spectroscopy and ana
Processing methods employing laser are often used to tailor semiconductors. For example, crystallization of semiconductors is induced via the interaction between laser and semiconductors – laser crystallization. While laser crystallization is widely used in preparing thin films made of a single chemical element, extending its use for those containing multiple chemical elements (e.g., metal oxides) could unfold applications currently not achievable. In this paper, a continuous-wave laser diode with a micrometer-scale chevron-shaped beam profile – micro chevron laser beam (μ-CLB) – is exploited to crystallize non-single-crystal CuO thin films deposited on fused silica substrates. Resulting single-crystal Cu2O strips are studied to reveal their unique characteristics associated with key parameters of the crystallization process.
Micro chevron laser beam annealing (μCLBA) of Si film and Ge film were introduced. Single crystal stripe with a dimension of several tens to hundreds μm in length and 3-8μm in width was formed in Si film or Ge film by scanning μCLBA over the film. Main boundaries in the c-Si stripe were Σ3 CSL twin boundary. Scanning speed of micro linear laser beam annealing (μLLBA) was varied from 0.05 m/s to 8m/s to investigate its influence to crystallinity. Even at 8m/s lateral growth taken place, however, crystal quality was better for slower lateral growth. Crystallization area per energy (APE) of μLLBA was evaluated and compared with other methods. It was found APE of μLLBA was larger than other method, especially for a display with low fill factor of TFT, APE can be several orders of magnitude larger.
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