Prof. Xin Gao Profile

Prof. Xin Gao

Professor at Changchun Univ of Science and Technology

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 20 December 2019 Paper

Effect of solvent polarity on surface characteristics and luminescent properties of octadecanethiol passivated GaAs

Yumeng Xu, Baoxue Bo, Xin Gao

Proceedings Volume 11209, 112093B (2019) https://doi.org/10.1117/12.2548825

KEYWORDS: Gallium arsenide, Bioalcohols, Luminescence, Oxides, Molecules, Molecular self-assembly, Sulfur, Surface properties, Chemical analysis, Semiconductor lasers

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SPIE Journal Paper | 24 August 2017

Analysis of thermal characteristics based on a new type diode laser packaging structure

Xiaolei Zhang, Baoxue Bo, Zhongliang Qiao, Yumeng Xu, Xin Gao

OE, Vol. 56, Issue 08, 085105, (August 2017) https://doi.org/10.1117/12.10.1117/1.OE.56.8.085105

KEYWORDS: Packaging, Semiconductor lasers, High power lasers, Resistance, Thermal effects, Heat flux, Optical simulations, Laser welding, Aluminum nitride, Laser damage threshold

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Proceedings Article | 17 October 2012 Paper

Based on fiber grating the high sensitivity all optical fiber CTD

Yong-Jie Wang, Xing Dai, Qiang Zhao, Fang Li, Xin Gao, Bao-Xue Bo

Proceedings Volume 8421, 842148 (2012) https://doi.org/10.1117/12.970293

KEYWORDS: Sensors, Ocean optics, Fiber Bragg gratings, Calibration, Optical fibers, Temperature sensors, Water, Fiber optics sensors, Refractive index, Optics manufacturing

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Proceedings Article | 7 January 2008 Paper

Preparation and property study of gold-tin alloys for packaging of high-power semiconductor lasers

Bo Huang, Jinqiang Chen, Zhongliang Qiao, Chunling Liu, YanPing Yao, Xin Gao, Baoxue Bo

Proceedings Volume 6824, 68241E (2008) https://doi.org/10.1117/12.756839

KEYWORDS: Gold, Tin, Semiconductor lasers, Copper, Aluminum nitride, High power lasers, Resistance, Packaging, Electroplating, Laser welding

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Proceedings Article | 24 December 2005 Paper

A novel structure for high peak power semiconductor lasers

Baoxue Bo, Xin Gao, Yi Qu, Xiuhua Fu, Jing Zhang, Hui Li, Peng Lu

Proceedings Volume 6028, 60280U (2005) https://doi.org/10.1117/12.667155

KEYWORDS: Semiconductor lasers, Quantum wells, Etching, Cladding, Absorption, Semiconducting wafers, Optical resonators, High power lasers, Wafer-level optics, Lab on a chip

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Proceedings Article | 24 December 2005 Paper

980 nm QCW high power semiconductor lasers array

Xin Gao, Baoxue Bo, Yi Qu

Proceedings Volume 6028, 60280W (2005) https://doi.org/10.1117/12.667160

KEYWORDS: High power lasers, Semiconductor lasers, Aluminum, Quantum wells, Gallium arsenide, Heatsinks, Mirrors, Waveguides, Erbium lasers, Fiber amplifiers

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Proceedings Article | 6 December 2005 Paper

CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N₂ ambient

Baoxue Bo, Xin Gao, Jing Zhang, Hui Li, Yi Qu, Baolin Zhang, Xiaohong Tang

Proceedings Volume 6020, 60202T (2005) https://doi.org/10.1117/12.636018

KEYWORDS: Metalorganic chemical vapor deposition, Semiconductor lasers, Semiconducting wafers, Doping, Gallium arsenide, Continuous wave operation, Arsenic, Waveguides, Cladding, Aluminum

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Proceedings Article | 6 December 2005 Paper

High-performance strain-compensated InGaAsN quantum-well ridge waveguide lasers

Yi Qu, Jing Zhang, Hui Li, Xin Gao, Baoxue Bo, J. X. Zhang, A. Uddin

Proceedings Volume 6020, 60200G (2005) https://doi.org/10.1117/12.634897

KEYWORDS: Phased array optics, Semiconducting wafers, Continuous wave operation, Oxides, Waveguide lasers, Semiconductor lasers, Metalorganic chemical vapor deposition, Quantum wells, Gallium arsenide, Oxidation

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Proceedings Article | 5 December 2005 Paper

High-performance 850-nm superluminescent diodes

Hui Li, Jing Zhang, Yi Qu, Xin Gao, Baoxue Bo, Guojun Liu

Proceedings Volume 6020, 60202U (2005) https://doi.org/10.1117/12.635614

KEYWORDS: Superluminescent diodes, Quantum wells, Gallium arsenide, Structural design, Antireflective coatings, Gyroscopes, Doping, Cladding, Non laser light sources

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Proceedings Article | 5 December 2005 Paper

A study on the optimal structures of high-power superluminescent diode

Jing Zhang, Yuesu Zhang, Hui Li, Yi Qu, Xin Gao, Baoxue Bo

Proceedings Volume 6020, 60202V (2005) https://doi.org/10.1117/12.635763

KEYWORDS: Superluminescent diodes, Photons, Absorption, Semiconductor lasers, Modulation, Gallium arsenide, Waveguides, Zinc, Indium gallium phosphide, Fiber couplers

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Proceedings Article | 3 December 2005 Paper

Operating characteristics of 980-nm high-power semiconductor laser stacked arrays packaged by microchannel coolers

Xin Gao, Baoxue Bo, Yi Qu, Jing Zhang, Hui Li

Proceedings Volume 6020, 60202I (2005) https://doi.org/10.1117/12.636028

KEYWORDS: Aluminum, Semiconductor lasers, High power lasers, Quantum wells, Waveguides, Gallium arsenide, Copper, Semiconducting wafers, Gallium

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Proceedings Article | 31 January 2005 Paper

980-nm high-power strained quantum well laser array fabricated by MBE

Xin Gao, Baoxue Bo, Ling Wang, Yi Qu

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.575258

KEYWORDS: Aluminum, Quantum wells, Waveguides, Gallium arsenide, High power lasers, Semiconductor lasers, Crystals, X-ray diffraction, Diffraction, Crystal optics

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Proceedings Article | 19 October 2001 Paper

Temperature dependence of gain in multiple-layer quantum dots

Yongqiang Ning, Xin Gao, Lijun Wang, Peter Smowton, Peter Blood

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.445007

KEYWORDS: Quantum dots, Multilayers, Absorption, Gallium, Cladding, Gallium arsenide, Waveguides, Aluminum, Temperature metrology, Astronomical imaging

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Proceedings Article | 19 October 2001 Paper

980-nm high-power semiconductor lasers

Xin Gao, Yi Qu, Hui Li, Baoxue Bo

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.445006

KEYWORDS: Semiconductor lasers, High power lasers, Gallium arsenide, Indium gallium arsenide, Aluminum, Quantum wells, Gallium, Cladding, Waveguides, Optical amplifiers

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Proceedings Article | 19 October 2001 Paper

High-power 940-nm laser arrays with nonabsorbing facets

Yi Qu, Baoxue Bo, Xin Gao, Xingde Zhang, Jiawei Shi

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.444929

KEYWORDS: Semiconductor lasers, High power lasers, Laser development, Gallium arsenide, Mirrors, Aluminum, Gallium, Continuous wave operation, Semiconducting wafers, Coating

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Proceedings Article | 19 October 2001 Paper

Dependence of threshold current density on the stacked quantum dot layers

Yongqiang Ning, Xin Gao, Yun Liu, Lijun Wang, Peter Smowton, Peter Blood

Proceedings Volume 4580, (2001) https://doi.org/10.1117/12.445005

KEYWORDS: Quantum dots, Laser damage threshold, Waveguides, Gallium, Semiconductor lasers, Gallium arsenide, Quantum dot lasers, Oxides, Aluminum, Astronomical imaging

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Proceedings Article | 16 October 2001 Paper

Silicon-based photonic wire waveguide

Yongqiang Ning, Li Qin, Xin Gao, Yuzhai Pan, Hui Suo, Lijun Wang

Proceedings Volume 4602, (2001) https://doi.org/10.1117/12.445711

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Proceedings Article | 16 October 2001 Paper

Farfield characteristics of InGaAs/GaAs quantum dot laser

Yongqiang Ning, Xin Gao, Lijun Wang, Peter Smowton, Peter Blood

Proceedings Volume 4602, (2001) https://doi.org/10.1117/12.445712

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Proceedings Article | 29 November 2000 Paper

High-power single quantum well array semiconductor lasers

Yi Qu, Baoxue Bo, Xin Gao, Baoshun Zhan, Xingde Zhang, Jiawei Shi

Proceedings Volume 4086, (2000) https://doi.org/10.1117/12.408412

KEYWORDS: Semiconductor lasers, Quantum wells, High power lasers, Pulsed laser operation, Laser development, Structural design, Refractive index, Mirrors, Laser bonding, Laser crystals

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Proceedings Article | 3 October 2000 Paper

High-power 980-nm laser arrays with nonabsorbing facets

Yi Qu, Baoxue Bo, Baoshun Zhang, Xin Gao, Xingde Zhang, Jiawei Shi

Proceedings Volume 4220, (2000) https://doi.org/10.1117/12.401716

KEYWORDS: Semiconductor lasers, High power lasers, Gallium arsenide, Nonabsorbing mirrors, Reflectivity, Dielectrics, Continuous wave operation, Semiconducting wafers, Deposition processes, Thin film deposition

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