Paper
28 July 1981 Quantitative Sub-Micrometer Linewidth Determination Using Electron Microscopy
Stephen Jensen, Gary Hembree, Jay Marchiando, Dennis Swyt
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Abstract
Quantitative determination of sub-micrometer linewidths in semiconductor devices and masks is demonstrated utilizing an approach employing complementary experimental measurements and theoretical modeling. Experimental measurements are performed utilizing the Microlength Calibrating Electron Probe (MCEP), a new facility at the National Bureau of Standards consisting of a scanning electron microscope modified to incorporate a scanning stage and laser-interferometer position measurement system. Automated data acquisition and analysis for the MCEP are achieved through interfacing to a laboratory minicomputer. Theoretical modeling based on Monte Carlo calculations provides a basis for selection of the position in the experimentally measured backscatter electron intensity profile that corresponds to the actual material line edge. A measurement on a photomask is shown which illustrates the utility of the MCEP facility and the Monte Carlo modeling calculations for accurate measurement of sub-micrometer linewidths.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen Jensen, Gary Hembree, Jay Marchiando, and Dennis Swyt "Quantitative Sub-Micrometer Linewidth Determination Using Electron Microscopy", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931879
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Cited by 6 scholarly publications.
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KEYWORDS
Monte Carlo methods

Electron beams

Scanning electron microscopy

Chromium

Calibration

Backscatter

Semiconductors

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