Single And Dual Wavelength Exposure Of Photoresist

J. LaRue; C. Ting

doi:10.1117/12.931868

28 July 1981 Single And Dual Wavelength Exposure Of Photoresist

J. LaRue, C. Ting

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931868
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The dependency of photoresist line width control on the photoresist thickness variations has been quantified for three different microelectronics wafer surfaces. The exposures were made with a step-and-repeat projection camera which is designed to image with both the Hg-g and Hg-h spectral lines to the wafer surface. A filter was placed in the light path so that resist exposures with only the Hg-g line could also be studied. The effect of camera defocus and nominal photoresist thicknesses of 800 and 1600 nm was included. The expected result of the line width variation periodicity being equal to 1/2 of the exposing wavelength was found. However, also found is an unexpected periodicity which could be described as ^λ_R/⁶

Citation Download Citation

J. LaRue and C. Ting "Single And Dual Wavelength Exposure Of Photoresist", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931868

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available