New Microlithographic Resists

Kang I. Lee; Harriet Jopson; Peter Cukor; David Shaver

doi:10.1117/12.933406

30 June 1982 New Microlithographic Resists

Kang I. Lee, Harriet Jopson, Peter Cukor, David Shaver

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933406
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

We have found that a family of ionic polymers, various oolyvinylnyridinium salts, can act as good electron beam resists. Exoosure of these polymers to a 20 XV electron beam resulted in sensitivities ranging up to 5 μcoulomb/cm². A number of materials definately exhibited submicron caoabilities. Furthermore, the highly aromatic nature of the nolymer provided the outstanding plasma etch resistance. In order to elucidate the chemical structural variables which influence the resist Performance, a series of polymers has been synthesized by varying molecular weights, molecular weight distributions, counterions, alkyl groups, degrees of Quaternization, etc. We subsequently studied the resist behavior of these materials. Several postulated mechanisms will be discussed to explain the resist action.

Citation Download Citation

Kang I. Lee, Harriet Jopson, Peter Cukor, and David Shaver "New Microlithographic Resists", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933406

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