Development of Ion-Implantation Confined, Shallow Mesa Stripe (Pn,Sn)Te/Pb(Te,Se) DH Laser Diodes

Clifton G. Fonstad; Austin Harton; Yong-Ning Jiang; Howard Appelman

doi:10.1117/12.937424

26 November 1983 Development of Ion-Implantation Confined, Shallow Mesa Stripe (Pn,Sn)Te/Pb(Te,Se) DH Laser Diodes

Clifton G. Fonstad, Austin Harton, Yong-Ning Jiang, Howard Appelman

Proceedings Volume 0438, Tunable Diode Laser Development and Spectroscopy Applications; (1983) https://doi.org/10.1117/12.937424
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.

Citation Download Citation

Clifton G. Fonstad, Austin Harton, Yong-Ning Jiang, and Howard Appelman "Development of Ion-Implantation Confined, Shallow Mesa Stripe (Pn,Sn)Te/Pb(Te,Se) DH Laser Diodes", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); https://doi.org/10.1117/12.937424

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