Recent Developments In Monolithic Phase-Locked Semiconductor Laser Arrays

J Katz; E Kapon; S Margalit; A. Yariv

doi:10.1117/12.941426

13 August 1984 Recent Developments In Monolithic Phase-Locked Semiconductor Laser Arrays

J Katz, E Kapon, S Margalit, A. Yariv

Proceedings Volume 0465, Spatial Light Modulators and Applications I; (1984) https://doi.org/10.1117/12.941426
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 Watts cw emitted power and less than 10 far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.

Citation Download Citation

J Katz, E Kapon, S Margalit, and A. Yariv "Recent Developments In Monolithic Phase-Locked Semiconductor Laser Arrays", Proc. SPIE 0465, Spatial Light Modulators and Applications I, (13 August 1984); https://doi.org/10.1117/12.941426

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