Bandgap Widening In Heavily Doped Oxide Semiconductors Used As Transparent Heat-Reflectors

I. Hamberg; C. G. Granqvist; K.F. Berggren; B. E. Sernelius; L. Engstrom

doi:10.1117/12.944778

2 November 1984 Bandgap Widening In Heavily Doped Oxide Semiconductors Used As Transparent Heat-Reflectors

I. Hamberg, C. G. Granqvist, K.F. Berggren, B. E. Sernelius, L. Engstrom

Proceedings Volume 0502, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III; (1984) https://doi.org/10.1117/12.944778
Event: 28th Annual Technical Symposium, 1984, San Diego, United States

Abstract

Doped oxide semiconductors,which are widely used as transparent heat-reflectors, have a wider energy gap than the undoped material. This bandgap widening was investigated in 1n203 and 1n203:Sn. Empirical data were extracted for coatings with electron density 1021 cm-3. They are interpreted within an effective-mass-model for n-doped semiconductors well above the Mott critical density. The impurities are ionized and the associated elect-rons occupy the bottom of the conduction band in the form of an electron gas. The model accounts for a Burstein-Moss shift as well as electron-electron and electron-impurity scattering treated in the Random Phase Approximation. Experiments and theory were recon-ciled by assuming a parabolic valence band with an effective mass ti 0.6 m. Earlier work on doped oxide semiconductors are assessed and criticized in the light of the present results.

Citation Download Citation

I. Hamberg, C. G. Granqvist, K.F. Berggren, B. E. Sernelius, and L. Engstrom "Bandgap Widening In Heavily Doped Oxide Semiconductors Used As Transparent Heat-Reflectors", Proc. SPIE 0502, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion III, (2 November 1984); https://doi.org/10.1117/12.944778

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