Paper
11 January 1987 Wafer Slicing
Werner F. Struth, Klaus Steffens, Wilfried Konig
Author Affiliations +
Proceedings Volume 0803, Micromachining of Elements with Optical and Other Submicrometer Dimensional and Surface Specifications; (1987) https://doi.org/10.1117/12.941276
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
Internal Diameter Sawing is the common used technique for slicing hard and brittle materials, such as semiconductive Silicon, Germanium or ceramics and glasses. Nevertheless, productivity and yield are relative low due to the difficult handling of the flexible tool. Increasing workpiece dimensions lead to increasing problems in realizing quality requirements, such as high flatness, low roughness and low crystal damage. The report deals with basic relationships in I D-Sawing, irrespective of workpiece material (geometry and kinematics) as well as respective to monocrystalline Silicon (cutting mechanism, lattice damage, flatness). Finally guidelines are given to improve process reliability.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Werner F. Struth, Klaus Steffens, and Wilfried Konig "Wafer Slicing", Proc. SPIE 0803, Micromachining of Elements with Optical and Other Submicrometer Dimensional and Surface Specifications, (11 January 1987); https://doi.org/10.1117/12.941276
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KEYWORDS
Silicon

Semiconducting wafers

Crystals

Abrasives

Micromachining

Optical components

Kinematics

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