Modelling of optoelectronic circuits based on resonant tunneling diodes

João F. M. Rei; James A. Foot; Gil C. Rodrigues; José M. L. Figueiredo

doi:10.1117/12.2271318

22 August 2017 Modelling of optoelectronic circuits based on resonant tunneling diodes

João F. M. Rei, James A. Foot, Gil C. Rodrigues, José M. L. Figueiredo

Proceedings Volume 10453, Third International Conference on Applications of Optics and Photonics; 1045308 (2017) https://doi.org/10.1117/12.2271318
Event: Third International Conference on Applications of Optics and Photonics, 2017, Faro, Portugal

Abstract

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Citation Download Citation

João F. M. Rei, James A. Foot, Gil C. Rodrigues, and José M. L. Figueiredo "Modelling of optoelectronic circuits based on resonant tunneling diodes", Proc. SPIE 10453, Third International Conference on Applications of Optics and Photonics, 1045308 (22 August 2017); https://doi.org/10.1117/12.2271318

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