Shockley-Read-Hall (SRH) recombination dark current in planar diffused P+n heterostructure InP/In0.53Ga0.47As/InP high density small pitch Focal Plane Arrays (FPAs)

R. DeWames; E. A. DeCuir Jr.; J. Schuster; N. K. Dhar

doi:10.1117/12.2315838

9 May 2018 Shockley-Read-Hall (SRH) recombination dark current in planar diffused P⁺n heterostructure InP/In_0.53Ga_0.47As/InP high density small pitch Focal Plane Arrays (FPAs)

R. DeWames, E. A. DeCuir Jr., J. Schuster, N. K. Dhar

Author Affiliations +

Proceedings Volume 10624, Infrared Technology and Applications XLIV; 1062405 (2018) https://doi.org/10.1117/12.2315838
Event: SPIE Defense + Security, 2018, Orlando, FL, United States

Abstract

In this work we use analytical and 3D numerical modeling tools to analyze data from InP/In_0.53Ga_0.47/InP double layer planar 15 pixel pitch focal plane arrays (FPAs) designed to image in the near infrared to determine array suitability for operation under low-level illumination, including overcast, “Night Glow”- only conditions. Notable is that the diffusion dark current component is the dominant current component near and above 300K and is limited by band-to-band radiative recombination processes. The Shockley- Read- Hall (SRH) minority carrier lifetime is τ_SRH =107μs. Recombination through band gap states in the space charge region (SCR) situated at the intrinsic Fermi level is the dominant component for temperatures below 300K as previously demonstrated using 3-D numerical simulations consisting of both bulk area and perimeter dependent components. 3-D numerical simulations in combination with scanning capacitance microscopy are paramount to characterizing the Zn-diffused p⁺n shallow step homojunction and to identifying technology limitations in small pitch high density (FPAs). Photon recycling effects, i.e., effects caused by repeated trapping of photons, are not observed in the measurements of the minority carrier lifetime and the diffusion dark current component. As a result, the diffusion current component J_diffusion α to the radiative recombination rate G_r(α) and the radiative minority carrier lifetime τ_radiative = 1/BN_d, where B is the radiative recombination coefficient and N_d the majority carrier concentration.

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R. DeWames, E. A. DeCuir Jr., J. Schuster, and N. K. Dhar "Shockley-Read-Hall (SRH) recombination dark current in planar diffused P⁺n heterostructure InP/In_0.53Ga_0.47As/InP high density small pitch Focal Plane Arrays (FPAs)", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 1062405 (9 May 2018); https://doi.org/10.1117/12.2315838

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