Photosensitive in-plane junction in graphene field effect transistor modified under femtoseconds laser irradiation

Ivan I. Bobrinetskiy; Aleksei V. Emelianov; Dmitry Kireev; Nerea Otero; Pablo M. Romero

doi:10.1117/12.2306585

4 May 2018 Photosensitive in-plane junction in graphene field effect transistor modified under femtoseconds laser irradiation

Ivan I. Bobrinetskiy, Aleksei V. Emelianov, Dmitry Kireev, Nerea Otero, Pablo M. Romero

Author Affiliations +

Proceedings Volume 10672, Nanophotonics VII; 106720A (2018) https://doi.org/10.1117/12.2306585
Event: SPIE Photonics Europe, 2018, Strasbourg, France

Abstract

The development of planar functional junction provides continuous, single-atom thick, in-plane integrated circuits. The production of atomic contacts of different materials (hetero/homostructures) is still a challenging task for 2D materials technology. In this paper we describe a new method of formation of a photosensitive junction by femtosecond laser pulses patterning of graphene FET. The laser-induced oxidation of graphene goes under high intensity laser pulses, which provide nonlinear effects in graphene like multiphoton absorption and hot carrier generation. The process of laser induced local oxidation is studied on single-layer graphene FET produced by wet transfer of CVD grown graphene on copper foil onto a Si/SiO₂ substrate. The 280 fs laser with 515 nm wavelength with various pulse energies is applied to modify of local electrical and optical properties of graphene. Thus, the developed process provides mask-less laser induced in-plane junction patterning in graphene. The scale of local heterojunction fabrication is about 1 μm. We observe that with an increasing of the laser fluence the number of defects increases according to two different mechanism for low and high fluences, respectively. The change of the charge carrier concentration causes the Dirac point shift in produced structures. We investigate the photoresponse in graphene junctions under fs pulsed laser irradiation with subthreshold energies. The response time is rather high while relaxation time is large because of charge traps at the graphene/SiO₂ interface.

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Citation Download Citation

Ivan I. Bobrinetskiy, Aleksei V. Emelianov, Dmitry Kireev, Nerea Otero, and Pablo M. Romero "Photosensitive in-plane junction in graphene field effect transistor modified under femtoseconds laser irradiation", Proc. SPIE 10672, Nanophotonics VII, 106720A (4 May 2018); https://doi.org/10.1117/12.2306585

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