Advanced ceramic protective lifetime prolong for particle control

Yuan Hsu; Yutaka Satou

doi:10.1117/12.2318943

12 June 2018 Advanced ceramic protective lifetime prolong for particle control

Yuan Hsu, Yutaka Satou

Proceedings Volume 10807, Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology; 108070J (2018) https://doi.org/10.1117/12.2318943
Event: Photomask Japan 2018, 2018, Yokohama, Japan

Abstract

As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra high density pattern for sub – 20nm tech device. Therefore particle source from all processes should be controlled extremely. Especially for dry etching process, Yttrium oxide (Y₂O₃) has been widely used for plasma resistance protective material such as lower electrode cover plate and inductively coupled plasma insulator. However, Y₂O₃ showed highest erosion rates under Cl₂ plasma condition [1], shorten protective lifetime. Therefore, selection of ceramic material must be important for particle control in dry etch process.

In this paper, we introduce Y₂O₃ coating film fluorination after plasma treatment. Y-F and Y-O bonding energies change after plasma treatment was observed with X-ray photoelectron spectroscopy (XPS). Expect fluorinated surface can prolong protective lifetime in Cl₂ plasma condition.

Citation Download Citation

Yuan Hsu and Yutaka Satou "Advanced ceramic protective lifetime prolong for particle control", Proc. SPIE 10807, Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology, 108070J (12 June 2018); https://doi.org/10.1117/12.2318943

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KEYWORDS

Coating

Plasma

Plasma treatment

Chlorine

Sputter deposition

Fluorine

Particles

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