Reseach on structural design and preparation technology of InGaAsInP photocathodes

Yong Wang; Feng Shi; Weiwei Sha; Junju Zhang

doi:10.1117/12.2505553

12 December 2018 Reseach on structural design and preparation technology of InGaAsInP photocathodes

Yong Wang, Feng Shi, Weiwei Sha, Junju Zhang

Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 108462M (2018) https://doi.org/10.1117/12.2505553
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China

Abstract

Based on the properties of InGaAs photocathode, the critical thickness of epitaxial layer is calculated, the structure of InGaAs/InP photocathode is designed, and the In0.53Ga0.47As/InP semiconductor material samples are epitaxially grown by MOCVD. We use the ultra-high vacuum preparation technology in cathode growth. After chemical cleaning, utilizing the GaAs photocathode multi-information measurement system which prepared by our laboratory, the InGaAs/InP photocathode samples are thermally purified at 650°C, 550°C and 400°C, respectively. Finally, the thermal purification results of InGaAs/InP photocathode materials are obtained through the surface analysis which carried out by XPS. At the same time, the spectral response curves at different thermal purification temperatures are given out. The research data will contribute to the further development of InGaAs/InP photocathode in the field of near-infrared low light level detection.

Citation Download Citation

Yong Wang, Feng Shi, Weiwei Sha, and Junju Zhang "Reseach on structural design and preparation technology of InGaAsInP photocathodes", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 108462M (12 December 2018); https://doi.org/10.1117/12.2505553

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