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14 March 2019 EUV insertion strategy into logic technology on the horizon of scaling paradigm change
Ryoung-Han R. Kim
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Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 1095706 (2019) https://doi.org/10.1117/12.2516524
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States
Abstract
Under the growing concern on the cost and complexity of pitch-only scaling, scaling paradigm in logic technology is changing with adoption of design technology co-optimization (DTCO) and system technology co-optimization (STCO). On this landscape of rapid technology evolution, Extreme Ultraviolet Lithography (EUVL) faces its insertion into high volume manufacturing (HVM) from 2019 with shift on focus from infrastructural readiness to high volume manufacturability. In this presentation, EUV insertion strategy into the logic technology nodes will be discussed on the horizon of current and up-coming industry technology nodes. With remaining technical challenges in EUV across mask, patterning, computational lithography and design, it will be discussed how EUV can be coupled with other technological considerations to enable smooth adoption.
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Ryoung-Han R. Kim "EUV insertion strategy into logic technology on the horizon of scaling paradigm change", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095706 (14 March 2019); https://doi.org/10.1117/12.2516524
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Cited by 2 scholarly publications.
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KEYWORDS
Extreme ultraviolet
Logic
Extreme ultraviolet lithography
Computational lithography
High volume manufacturing
Manufacturing
Optical lithography
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