Design and theory analysis of infrared detector

Xiu-qiang Li

doi:10.1117/12.2521432

12 March 2019 Design and theory analysis of infrared detector

Xiu-qiang Li

Proceedings Volume 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application; 110231C (2019) https://doi.org/10.1117/12.2521432
Event: Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 2018, Xi'an, China

Abstract

In order to achieve the purpose of far detective distance、relatively high anti-jamming performance, the new missile requirements of infrared detector with high detectivity and low signal-to-noise(SNR), fast cooling-down. Based on the mechanism of infrared detector and design theory, combining technology practice, the indium antimonide(InSb) detector chip passivation film and the antireflection coating design and manufacturing are analyzed, while the Principe of multi-layer structure of the fast cooling-down cooler tubes are analyzed. Its detectivity is beyond 3x10¹⁰ cm·Hz^1/2·W^-1, the current responsivity over 0.24A/W, the impedance at zero bias voltage beyond 500KΩ, cooling-down time less than 3 seconds. The specifications meet the requirement for air-defense missile, and out-door the infrared detector has been demonstrated successfully. It can realize the requirement of missile detection distance is greater than 5km.

Citation Download Citation

Xiu-qiang Li "Design and theory analysis of infrared detector", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 110231C (12 March 2019); https://doi.org/10.1117/12.2521432

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KEYWORDS

Infrared detectors

Missiles

Sensors

Infrared sensors

Reticles

Antireflective coatings

Refractive index

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