Fabrication of the drift-enhanced InGaAs p-i-n photodetectors

G. Y. Li; B. Niu; X. W. Gu; Y. Wang; Y. C. Kong

doi:10.1117/12.2520586

12 March 2019 Fabrication of the drift-enhanced InGaAs p-i-n photodetectors

G. Y. Li, B. Niu, X. W. Gu, Y. Wang, Y. C. Kong

Proceedings Volume 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application; 1102345 (2019) https://doi.org/10.1117/12.2520586
Event: Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 2018, Xi'an, China

Abstract

We have demonstrated a class of drift-enhanced InGaAs/InP p-i-n photodetectors with the top-illuminated light in the 1550 nm wavelength band. An InGaAsP layer is used at the InGaAs/InP hetero-interface to reduce the contact resistivity. For devices of 10 μm × 10 μm， 20 μm × 20 μm and 30 μm × 30 μm mesa areas, the 3-dB bandwidths are measured to be 32 GHz, 12 GHz and 6 GHz, respectively. Also we have obtained a dark current of 64 nA and a responsivity of 0.43 A/W at -4 V bias for 10 μm × 10 μm photodetector.

Citation Download Citation

G. Y. Li, B. Niu, X. W. Gu, Y. Wang, and Y. C. Kong "Fabrication of the drift-enhanced InGaAs p-i-n photodetectors", Proc. SPIE 11023, Fifth Symposium on Novel Optoelectronic Detection Technology and Application, 1102345 (12 March 2019); https://doi.org/10.1117/12.2520586

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