We developed back-illuminated Ge-on-Si photodiodes to apply such microstructures. Especially the usage of light trapping structures to increase the quantum efficiency of the photodiodes shows great potential. Among the different microstructures we chose black silicon (b-Si) as a promising light trapping candidate. After the fabrication, photodiodes with different configurations were evaluated. The obtained results show a strong increase of the quantum efficiency due to both, the existence of an Al mirror and the application of b-Si. |
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