Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with electrical writing and reading is one of the central topics of antiferromagnetic spintronics. So far, such a combined functionality has been demonstrated via 90° reorientations of the Néel vector generated by the current-induced spin-orbit torque and sensed by the linear-response anisotropic magnetoresistance. [1, 2]
In my presentation I will show electrically control and detection of 180° Néel vector reversals in a collinear antiferromagnet with broken time reversal and spatial inversion symmetries. [3]
[1] Železný, J. et al., Phys. Rev. Lett. 113, 157201 (2014).
[2] Wadley, P. et al., Science 351,587 (2016).
[3] J. Godhino et. al, Nat. Com. 9, 4686 (2018)
|