Presentation
10 September 2019 Photon entanglement generation and teleportation using semiconductor quantum dots (Conference Presentation)
Armando Rastelli, Thomas Fromherz
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Abstract
Among different solid-state emitters of quantum light, epitaxial GaAs quantum dots (QDs) have recently emerged as nearly-ideal sources of triggered polarization entangled photon pairs [1]. This property, combined with the strongly suppressed probability of multiphoton emission under resonant excitation [2] has allowed the implementation of quantum teleportation using photons subsequently emitted by a single QD [3]. In this talk I will discuss the peculiar properties of GaAs QDs [4,5], their performance as emitters of both single and entangled photons, as well as possible methods to engineer their light emission characteristics [1,4] to meet the demanding requirements imposed by photonic quantum technologies. [1] D. Huber et al. Phys. Rev. Lett. 121, 033902 (2018). [2] L. Schweickert et al. Appl. Phys. Lett. 112, 093106 (2018). [3] M. Reindl et al. Science Adv. (2018). [4] X. Yuan et al. Nat. Comm. 9, 3058 (2018). [5] M. Reindl et al. https://arxiv.org/abs/1901.11251.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Armando Rastelli and Thomas Fromherz "Photon entanglement generation and teleportation using semiconductor quantum dots (Conference Presentation)", Proc. SPIE 11091, Quantum Nanophotonic Materials, Devices, and Systems 2019, 1109117 (10 September 2019); https://doi.org/10.1117/12.2531744
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