Development of a 780nm narrow line width semiconductor laser device

Fei Wu; Haocheng Sun; Chensheng Wang; Zhiqiang Qi

doi:10.1117/12.2537424

19 November 2019 Development of a 780nm narrow line width semiconductor laser device

Fei Wu, Haocheng Sun, Chensheng Wang, Zhiqiang Qi

Proceedings Volume 11182, Semiconductor Lasers and Applications IX; 111820C (2019) https://doi.org/10.1117/12.2537424
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China

Abstract

For the requirement of cold atom interference technology, a 780nm narrow line width extended cavity diode laser device is developed and verified. Based on the simulation modeling of extended cavity and light beam, the laser structure, hermetic package, hybrid integration process and thermal control design is introduced. Then the integration of LD and multiple micro-optical elements are realized with a self-building integration platform, and the die-bonding process is also indicated in details. Finally, the integrated device is tested and verified to have 100KHz line width in 780.24nm, with a 50mW output power.

Citation Download Citation

Fei Wu, Haocheng Sun, Chensheng Wang, and Zhiqiang Qi "Development of a 780nm narrow line width semiconductor laser device", Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 111820C (19 November 2019); https://doi.org/10.1117/12.2537424

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