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9 March 2020 Vapor transport growth of pure and Cr-doped ZnSe and ZnS single crystals (Conference Presentation)
Peter G. Schunemann, Kevin T. Zawilski
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Proceedings Volume 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX; 112640U (2020) https://doi.org/10.1117/12.2547084
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
Polycrystalline Cr:ZnSe and Cr:ZnS have greatly advanced as mid-IR laser host materials in the last 20 years. These materials are also highly attractive as passive q-switches (PSQs) for 1.5- and 2-micron lasers, enabling greatly-simplified laser architectures for compact, multi-watt, pulsed 2-micron lasers and mid-infrared optical parametric oscillators (OPOs). Evidence suggests that power scaling of lasers and PSQs can be achieved by using single crystal Cr:ZnSe and Cr:ZnS. Here we report successful growth of high purity single crystal ZnS and ZnSe by CVT and PVT respectively, and Cr-doping achieved by iodine-assisted vapor transport of CrSe located in a separate temperature-controlled zone.
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Peter G. Schunemann and Kevin T. Zawilski "Vapor transport growth of pure and Cr-doped ZnSe and ZnS single crystals (Conference Presentation)", Proc. SPIE 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 112640U (9 March 2020); https://doi.org/10.1117/12.2547084
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KEYWORDS
Crystals
Zinc
Pulsed laser operation
Diffusion
Laser development
Mid-IR
Optical parametric oscillators
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