Lowering GeSn lasing thresholds for future integration on Si (Conference Presentation)

Anas Elbaz; Jeremie Chretien; Riazul Arefin; Lara Casiez; Konstaninos Pantzas; Gilles Patriarche; Isabelle Sagnes; Sebastien Sauvage; Xavier Checoury; Nicolas Pauc; Vincent Calvo; Alexei Chelnokov; Vincent Reboud; Jean-Michel Hartmann; Moustafa El Kurdi

doi:10.1117/12.2545510

9 March 2020 Lowering GeSn lasing thresholds for future integration on Si (Conference Presentation)

Anas Elbaz, Jeremie Chretien, Riazul Arefin, Lara Casiez, Konstaninos Pantzas, Gilles Patriarche, Isabelle Sagnes, Sebastien Sauvage, Xavier Checoury, Nicolas Pauc, Vincent Calvo, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, Moustafa El Kurdi

Author Affiliations +

Proceedings Volume 11285, Silicon Photonics XV; 112850S (2020) https://doi.org/10.1117/12.2545510
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Lasing in bulk GeSn alloys have been reported lately with relatively high thresholds in the range of several hundreds of kW/cm². This can be mainly attributed to high defect densities of high Sn content alloy thick layers grown on relaxed Ge-VS. Indeed the use of high Sn contents in Ge(1-x)Snx alloy to reach direct band gap alignment (with xSn>10%) consequently results in large lattice mismatches with Ge and therefore produces large defect densities in partially relaxed thick layers. We show here that GeSn alloys with low Sn content exhibit strongly reduced lasing thresholds densities, in the 10 kW/cm² range, in microdisk cavities. We developed a layer transfer technology enabling management of the GeSn/Ge defect interface thus allowing to further reduce lasing thresholds in the kW/cm² range. The layer transfer additionally allows tensile strain engineering using silicon nitride stressor layer to increase the band structure directness as required for RT-laser operation.

Conference Presentation

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Anas Elbaz, Jeremie Chretien, Riazul Arefin, Lara Casiez, Konstaninos Pantzas, Gilles Patriarche, Isabelle Sagnes, Sebastien Sauvage, Xavier Checoury, Nicolas Pauc, Vincent Calvo, Alexei Chelnokov, Vincent Reboud, Jean-Michel Hartmann, and Moustafa El Kurdi "Lowering GeSn lasing thresholds for future integration on Si (Conference Presentation)", Proc. SPIE 11285, Silicon Photonics XV, 112850S (9 March 2020); https://doi.org/10.1117/12.2545510

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KEYWORDS

Silicon

Tin

Germanium

Interfaces

Optical pumping

Photonic integrated circuits

Semiconductor lasers

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