Presentation
9 March 2020 Identification of a boron-oxygen complex as the origin of a non-radiative recombination process in silicon photodetectors and solar cells (Conference Presentation)
Matthew P. Halsall, Michelle Vaqueiro Contreras, Vladimir P. Markevich, Jose Coutinho, Paulo Santos, Iain F. Crowe, Ian Hawkins, Stanislau B. Lastovskii, Leonid I. Murin, Anthony R. Peaker
Author Affiliations +
Proceedings Volume 11285, Silicon Photonics XV; 112850Z (2020) https://doi.org/10.1117/12.2543773
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
For 40 years it has been deduced that the presence of Boron and Oxygen in silicon causes the formation of a non-radiative recombination centre, without any consensus as to its exact nature. Here we report the observation, using deep level transient spectroscopy and photoluminescence of the conversion of a deep boron-di-oxygen-related donor trapping state into a shallow acceptor under the action of light or injected carriers. Using ab initio modelling, we propose structures of the B-O2 defect which match the experimental findings. Implications of the presence of this defect, particularly on its deep donor (carrier trapping) configuration, on silicon photodetectors is discussed.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew P. Halsall, Michelle Vaqueiro Contreras, Vladimir P. Markevich, Jose Coutinho, Paulo Santos, Iain F. Crowe, Ian Hawkins, Stanislau B. Lastovskii, Leonid I. Murin, and Anthony R. Peaker "Identification of a boron-oxygen complex as the origin of a non-radiative recombination process in silicon photodetectors and solar cells (Conference Presentation)", Proc. SPIE 11285, Silicon Photonics XV, 112850Z (9 March 2020); https://doi.org/10.1117/12.2543773
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KEYWORDS
Silicon

Photodetectors

Solar cells

Spectroscopy

Boron

Diodes

Fabrication

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