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Despite comparatively poor interlayer conductivity photosensors of few-layer semiconducting 2D transition metal dichalcogenides (TMDCs) can be both fast (<70 ps) and highly efficient (IQE>50%). To understand the unexpected result, we use tunable E-fields to isolate the dynamics of interlayer electron-hole dissociation using time-space resolved photocurrent microscopy on semiconducting TMDCs and thin-film transistors. We show how this novel scanning microscopy approach, combines ultrafast photocurrent and transient absorption to identify new long-lived and metastable interlayer electronic states in emerging twisted and stacked 2D and thin-film devices.
Kyle T. Vogt,George Mattson, andMatt W. Graham
"Ultrafast and ultrabroadband photocurrent microscopy resolves dynamics driving 2D-material photosensors and amorphous oxide thin-film transistors (Conference Presentation)", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128818 (10 March 2020); https://doi.org/10.1117/12.2536441
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Kyle T. Vogt, George Mattson, Matt W. Graham, "Ultrafast and ultrabroadband photocurrent microscopy resolves dynamics driving 2D-material photosensors and amorphous oxide thin-film transistors (Conference Presentation)," Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128818 (10 March 2020); https://doi.org/10.1117/12.2536441