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17 April 2020 A flexible UV photodetector based on SnSe2 QDs and graphene
Xiangyang Li, Huancheng Zhao, Huawei Liang, Min Zhang, Hong Su, Shuangchen Ruan, Ling Li
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Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 1145534 (2020) https://doi.org/10.1117/12.2564392
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
Graphene is a two-dimensional carbon material which has been extensively studied for its applications in electronic devices due to its fast carrier kinetics. However, the weak photon absorption of graphene limits its application in photodetectors. Transition metal chalcogenides (TMDCs) quantum dots (QDs) have been used to modify the graphene properties since these QDs have abundant active edge sites and specific optoelectronic properties. In this study, we synthesized SnSe2 QDs by the process of sonication and laser ablation. The average size of SnSe2 QDs was characterized by the transmission electron microscopy (TEM). We demonstrated a sensitive ultraviolet (UV) photodetector based on graphene and SnSe2 QDs on a polyethylene terephthalate (PET) substrate. The responsibility of the device was up to 1830 AW-1 when the irradiation density was 155.2 μW/cm2 . The rising time τ𝒓 was 0.26 s. The device showed good stability even after bending 100 times. SnSe2 QDs enhanced the light absorption and the creation of photocarriers which could extend the applications of graphene in flexible optoelectronic devices.
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Xiangyang Li, Huancheng Zhao, Huawei Liang, Min Zhang, Hong Su, Shuangchen Ruan, and Ling Li "A flexible UV photodetector based on SnSe2 QDs and graphene", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 1145534 (17 April 2020); https://doi.org/10.1117/12.2564392
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KEYWORDS
Graphene
Photodetectors
Ultraviolet radiation
Laser ablation
Quantum dots
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