Paper
17 April 2020 CMOS compatible broadband graphene/silicon nanocrystals photodetectors
Dongchen Wang, Pengxiao Xu, Yan Wang, Yun Wu, Zhengyi Cao, Guoqing You, Guanghua Tang
Author Affiliations +
Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114557B (2020) https://doi.org/10.1117/12.2565345
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
Broadband photodetectors are becoming attractive in all weather and all time detection. However, silicon, germanium or compound semiconductors could not cover the visible and infrared wavebands which are commonly used in optoelectronic application. Here, we demonstrate a broadband photodetector based on graphene and silicon nanocrystals which are all CMOS-compatible. We achieved a photodetector which photoelectric response range covering visible and infrared (400-1600nm) and peak response up to 630mA/W. Furthermore, the photoelectric response time lower than 50μs.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongchen Wang, Pengxiao Xu, Yan Wang, Yun Wu, Zhengyi Cao, Guoqing You, and Guanghua Tang "CMOS compatible broadband graphene/silicon nanocrystals photodetectors", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114557B (17 April 2020); https://doi.org/10.1117/12.2565345
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KEYWORDS
Photodetectors

Graphene

Infrared radiation

Nanocrystals

Silicon

Transistors

Visible radiation

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