Study on electronic and optical properties of GaN nanostructure arrays

Xiaodong Guo; Lei Liu; Xingyue Zhangyang

doi:10.1117/12.2572354

21 August 2020 Study on electronic and optical properties of GaN nanostructure arrays

Xiaodong Guo, Lei Liu, Xingyue Zhangyang

Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 1146508 (2020) https://doi.org/10.1117/12.2572354
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Conference Poster

Abstract

The simulation models of gallium nitride (GaN) nanostructure arrays are designed by COMSOL Multiphysics software package based on finite element method (FEM). The effects of changes of GaN nanowires in axial geometry on photoelectron concentration distributions performance are analyzed. And the absorptivity differences of nanorods, truncated-cones and inverted-pencil structures in ultraviolet band are studied. Analysis of simulation results pointed out that both truncated-corn arrays and inverted-pencil arrays have the ability of boosting light absorption compared to nanorod arrays. Thus, such positive conclusion of the axial structure changed GaN nanowires would offer new references for the photoemission layer design of the photocathode.

Conference Presentation

Citation Download Citation

Xiaodong Guo, Lei Liu, and Xingyue Zhangyang "Study on electronic and optical properties of GaN nanostructure arrays", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 1146508 (21 August 2020); https://doi.org/10.1117/12.2572354

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