Electrical transport properties of n- and p- doped InSe: Bulk crystals versus exfoliated layers

Zheng Sun; Sergiy Krylyuk; Jinshui Miao; Edwin J. Heilweil; Timothy J. Magnanelli; Amber McCreary; Angela Hight Walker; Patrick Vora; Deep Jarivala; Mona Zaghloul; Albert V. Davydov

doi:10.1117/12.2567242

21 August 2020 Electrical transport properties of n- and p- doped InSe: Bulk crystals versus exfoliated layers

Zheng Sun, Sergiy Krylyuk, Jinshui Miao, Edwin J. Heilweil, Timothy J. Magnanelli, Amber McCreary, Angela Hight Walker, Patrick Vora, Deep Jarivala, Mona Zaghloul, Albert V. Davydov

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Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 114650C (2020) https://doi.org/10.1117/12.2567242
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

Efficient doping of 2D materials, including carrier type, concentration and mobility, is challenging but essential for enabling their future electronic and photonic applications. We are developing substitutional n- and p- doping of InSe semiconductor by introducing Sn and Zn, respectively, in the Bridgman bulk crystal growth. Electrical transport properties of undoped vs. n- and p- doped InSe crystals are compared by conducting Hall measurements on bulk crystals and FET transport measurements on exfoliated thin layers. Undoped InSe is intrinsically n-type in both bulk and thin-film forms, with [n]~3.5E14 cm-3 and mu values of up to 1,400 cm2 V-1 s-1 for thick layers at 300K. Carrier concentration in Sn-doped thick layers increases approximately two-fold, while the corresponding mobility reduces ~2 times at 300 K. Zn-doped InSe shows p- behavior for bulk InSe with [p]~7.9E13 cm-3 and mu~43 cm2 V-1 s-1 at 300 K, which reverts to ambipolar/n- type behavior for thin layers in FET devices.

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Zheng Sun, Sergiy Krylyuk, Jinshui Miao, Edwin J. Heilweil, Timothy J. Magnanelli, Amber McCreary, Angela Hight Walker, Patrick Vora, Deep Jarivala, Mona Zaghloul, and Albert V. Davydov "Electrical transport properties of n- and p- doped InSe: Bulk crystals versus exfoliated layers", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650C (21 August 2020); https://doi.org/10.1117/12.2567242

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