Induced Optical Reflectivity By Local Variation Of Conductivity In Metal-Insulator-Semiconductor Structures

Thad J. Englert

doi:10.1117/12.962257

5 February 1990 Induced Optical Reflectivity By Local Variation Of Conductivity In Metal-Insulator-Semiconductor Structures

Thad J. Englert

Author Affiliations +

Proceedings Volume 1151, Optical Information Processing Systems and Architectures; (1990) https://doi.org/10.1117/12.962257
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Calculations based on theoretical models of metal-insulator- semiconductor structures show that moderate applied potentials may cause sufficiently large induced inversion charge carrier densities at the semiconductor surface to yield reflectivities approaching 100 percent at the insulator-semiconductor interface. Using p-type silicon as the semiconductor material, positive gate potentials up to 10 volts applied to the metal predict reflectivities from approximately 15 percent to nearly 100 percent. The dependence of doping concentration, insulator thickness and gate voltage are shown.

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Thad J. Englert "Induced Optical Reflectivity By Local Variation Of Conductivity In Metal-Insulator-Semiconductor Structures", Proc. SPIE 1151, Optical Information Processing Systems and Architectures, (5 February 1990); https://doi.org/10.1117/12.962257

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