Performance Of A Linear Multiplexed MWIR FPA Featuring Buffered Direct Injection

J. J. Forsthoefel; R. M. Davis; C. A. Niblack; J. E. Doles

doi:10.1117/12.978587

8 January 1990 Performance Of A Linear Multiplexed MWIR FPA Featuring Buffered Direct Injection

J. J. Forsthoefel, R. M. Davis, C. A. Niblack, J. E. Doles

Proceedings Volume 1157, Infrared Technology XV; (1990) https://doi.org/10.1117/12.978587
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Initial evaluation of the performance characteristics of a 1 x 128 dual multiplexed MWIR FPA assembly are discussed. The CMOS multiplexer individually buffers the input to each element of the photovoltaic indium antimonide (InSb) detector array. Individual charge amplifiers allow signal integration on an integration capacitor located within each channel of the multiplexer. Two different capacitance values can be digitally selected to allow high sensitivity in low incident background or high storage capacity for high background applications. A description of the multiplexer architecture is presented. In the high sensitivity mode of operation, the detector charge storage capacity is 3.5 x 10⁶ electrons with an electronic sensitivity of 0.6 μV/electron. A larger storage capacity of 3.5 x 10⁷ electrons can be selected in a lower sensitivity mode. The InSb detectors have spectral response in the 1 to 5.5 μm region. The detectors operate at near zero bias so dark current non-uniformities are minimized and operating temperatures of 100 to 120 degrees Kelvin are practical. Performance characteristics discussed will include D*, signal linearity, read noise, responsivity, and quantum efficiency.

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J. J. Forsthoefel, R. M. Davis, C. A. Niblack, and J. E. Doles "Performance Of A Linear Multiplexed MWIR FPA Featuring Buffered Direct Injection", Proc. SPIE 1157, Infrared Technology XV, (8 January 1990); https://doi.org/10.1117/12.978587

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