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Highly conductive Si-doped epitaxial β-Ga2O3 films with a wide bandgap and high critical field strength were fabricated by pulsed laser deposition. The carrier concentration and Hall mobility are 4.06 × 1020 cm-3 and 58.7 cm2/Vs, respectively. Thus, overall conductivity has been calculated to be 3800 S/cm, which is the highest value ever reported based on β-Ga2O3 material. This degenerately doped layer will enhance the overall transistor performance through an ohmic regrowth process. Additionally, this opens up potential applications as a transparent conductive oxide layer due to coexistence of transparency and low resistivity (2.63 x10-4 Ω-cm) similar to commercial ITO.
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