Doping of gallium oxide and aluminum gallium oxide alloys

Chris G. Van de Walle

doi:10.1117/12.2588459

5 March 2021 Doping of gallium oxide and aluminum gallium oxide alloys

Chris G. Van de Walle

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870K (2021) https://doi.org/10.1117/12.2588459
Event: SPIE OPTO, 2021, Online Only

Abstract

Ga2O3 is a highly promising material for power electronics, thanks to its large band gap (4.8 eV) and high breakdown voltage. Better control of doping is still an active research topic, both in Ga2O3 and in (AlxGa1-x)2O3 alloys. First-principles modeling, using advanced hybrid functional calculations within density functional theory, can greatly help in resolving experimental puzzles and guiding optimal doping conditions. Work performed in collaboration with S. Mu, J. L. Lyons, H. Peelaers, J. B. Varley, and D. Wickramaratne.

Conference Presentation

Citation Download Citation

Chris G. Van de Walle "Doping of gallium oxide and aluminum gallium oxide alloys", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870K (5 March 2021); https://doi.org/10.1117/12.2588459

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