Revealing the origin of electrically active defects in beta-Ga2O3

Lasse Vines

doi:10.1117/12.2588713

5 March 2021 Revealing the origin of electrically active defects in β-Ga₂O₃

Lasse Vines

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870N (2021) https://doi.org/10.1117/12.2588713
Event: SPIE OPTO, 2021, Online Only

Abstract

Monoclinic gallium sesquioxide (b-Ga2O3) has emerged in recent years as a promising material for applications in power electronics and UV photo-detectors, but point defects in this interesting material is not well understood and may even limit device performance. Here, we will discuss the present status of understanding electrically active defects in β-Ga2O3, and present recent results related to intrinsic and impurity related defect centers. Indeed, deep level transient spectroscopy (DLTS) and steady state photocapacitance spectroscopy (SSPC) show that several electrically active defect levels are present in as grown material, or may arise after irradiation. Combining electrical characterization, secondary ion mass spectrometry (SIMS) and density functional theory (DFT), we have recently identified several of the defects and their electrical properties, and both intrinsic and extrinsic defect identification will be discussed.

Conference Presentation

Citation Download Citation

Lasse Vines "Revealing the origin of electrically active defects in β-Ga₂O₃", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870N (5 March 2021); https://doi.org/10.1117/12.2588713

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