Comparative study of MBE- and ALD-deposited doped zinc oxide

Dhruv Fomra; Kai Ding; Vitaliy Avrutin; Ümit Özgür; Nathaniel Kinsey

doi:10.1117/12.2588695

5 March 2021 Comparative study of MBE- and ALD-deposited doped zinc oxide

Dhruv Fomra, Kai Ding, Vitaliy Avrutin, Ümit Özgür, Nathaniel Kinsey

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 1168711 (2021) https://doi.org/10.1117/12.2588695
Event: SPIE OPTO, 2021, Online Only

Abstract

Recently, materials with vanishing refractive index, near-zero-index (NZI), have garnered considerable amount of attention, primarily for their ability to exhibit enhanced light matter interaction, due to slow light affects. Furthermore, effects such as static light, enhanced nonlinearities and emission tailoring have made such materials a heavily researched area. Amongst them, transparent conducting oxides (TCOs), a class of materials that have vanishing index at technologically relevant near-IR spectral range, are increasingly being investigated, for their potential use in photonic circuits. Wide natural abundance of ZnO together with well-studied properties make ZnO-based TCOs, such as aluminum- and gallium-doped ZnO particularly attractive for NZI applications.

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Dhruv Fomra, Kai Ding, Vitaliy Avrutin, Ümit Özgür, and Nathaniel Kinsey "Comparative study of MBE- and ALD-deposited doped zinc oxide", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 1168711 (5 March 2021); https://doi.org/10.1117/12.2588695

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KEYWORDS

Zinc oxide

Atomic layer deposition

Sapphire

Gallium

Molecular beam epitaxy

Photonic integrated circuits

Refractive index

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