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9 March 2021 2D material strainoptronics
Volker J. Sorger
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Proceedings Volume 11688, 2D Photonic Materials and Devices IV; 1168806 (2021) https://doi.org/10.1117/12.2577694
Event: SPIE OPTO, 2021, Online Only
Abstract
Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A/W) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material. Non-planarized waveguide structures show a bandgap modulation of 0.2 eV, resulting in a large photoresponse in an otherwise photoinactive medium when unstrained. Unlike graphene-based photodetectors that rely on a gapless band structure, this photodetector shows an approximately 100-fold reduction in dark current, enabling an efficient noise-equivalent power of 90 pW/Hz^0.5. Such a strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.
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Volker J. Sorger "2D material strainoptronics", Proc. SPIE 11688, 2D Photonic Materials and Devices IV, 1168806 (9 March 2021); https://doi.org/10.1117/12.2577694
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KEYWORDS
Photodetectors
Integrated optics
Integrated photonics
Modulation
Optoelectronics
Silicon photonics
System integration
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