Enhanced self-aligned structure for improved lateral brightness in 940 nm high-power broad-area diode lasers

M. Elattar; O. Brox; P. Della Casa; A. Maaßdorf; D. Martin; H. Wenzel; A. Knigge; P. Crump

doi:10.1117/12.2578190

5 March 2021 Enhanced self-aligned structure for improved lateral brightness in 940 nm high-power broad-area diode lasers

M. Elattar, O. Brox, P. Della Casa, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, P. Crump

Author Affiliations +

Proceedings Volume 11705, Novel In-Plane Semiconductor Lasers XX; 117050N (2021) https://doi.org/10.1117/12.2578190
Event: SPIE OPTO, 2021, Online Only

Abstract

We present 940nm GaAs-based high-power broad-area diode lasers that use an enhanced self-aligned lateral structure "eSAS", implemented within an extreme-triple-asymmetric vertical structure with a thin p-side. In this structure, two-step epitaxial growth with intermediate selective etching is used to introduce current-blocking structures consisting of n-doped GaAs and InGaP layers outside the laser stripe, whose location, thicknesses and doping concentrations are precisely defined. These blocking structures confine current to the device center, thus reducing carrier losses in the edges and limiting the detrimental effects of lateral current spreading and carrier accumulation on beam quality, without compromising conversion efficiency, output power or polarization purity. We present results of eSAS single-emitters as well as bars with multiple emitters, in comparison to gain-guided reference devices. In addition, we demonstrate optimized blocking structures with improved current blocking, which are crucial for the realization of the eSAS structure.

Conference Presentation

Citation Download Citation

M. Elattar, O. Brox, P. Della Casa, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, and P. Crump "Enhanced self-aligned structure for improved lateral brightness in 940 nm high-power broad-area diode lasers", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 117050N (5 March 2021); https://doi.org/10.1117/12.2578190

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