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1 August 2021 Single emitter creation of nitrogen vacancy centers in 4H silicon carbide
Weibo Gao, Mu Zhao
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Proceedings Volume 11806, Quantum Nanophotonic Materials, Devices, and Systems 2021; 118060C (2021) https://doi.org/10.1117/12.2597197
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
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Weibo Gao and Mu Zhao "Single emitter creation of nitrogen vacancy centers in 4H silicon carbide", Proc. SPIE 11806, Quantum Nanophotonic Materials, Devices, and Systems 2021, 118060C (1 August 2021); https://doi.org/10.1117/12.2597197
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KEYWORDS
Silicon carbide
Nitrogen
Wafer-level optics
Ion implantation
Magnetic sensors
Magnetism
Quantum communications
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