Presentation + Paper
5 March 2022 Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon
Author Affiliations +
Proceedings Volume 12002, Oxide-based Materials and Devices XIII; 1200208 (2022) https://doi.org/10.1117/12.2608070
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
A Si-integrated oxide-nitride deep-ultraviolet photodetector with remarkable photosensitivity is demonstrated. The proposed device topology is realized through the disordered nucleation of β-Ga2O3 crystals on monocrystalline TiN interlayers forming an oxide-nitride vertical heterostructure stack housed on a Si substrate. Spectral responsivity levels of about 240 A/W at illuminating power density levels of around 7.40 μW/cm2 were achieved.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nasir Alfaraj, Kuang-Hui Li, Chun Hong Kang, Laurentiu Braic, Nicolae Catalin Zoita, Adrian Emil Kiss, Tien Khee Ng, and Boon S. Ooi "Ultralow-power deep-ultraviolet photodetection using oxide-nitride heterojunctions integrated on silicon", Proc. SPIE 12002, Oxide-based Materials and Devices XIII, 1200208 (5 March 2022); https://doi.org/10.1117/12.2608070
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KEYWORDS
Photodetectors

Silicon

Deep ultraviolet

Thin films

Heterojunctions

Optoelectronics

Thin film growth

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