Improved fab-out EDS prediction of memory device using effective accuracy equation

Heeyoon Han; Wansik Nam; Hyeungcheol Mun; Sangbong Lee; Sungyoon Ryu; Younghoon Sohn

doi:10.1117/12.2613619

26 May 2022 Improved fab-out EDS prediction of memory device using effective accuracy equation

Heeyoon Han, Wansik Nam, Hyeungcheol Mun, Sangbong Lee, Sungyoon Ryu, Younghoon Sohn

Proceedings Volume 12053, Metrology, Inspection, and Process Control XXXVI; 120531S (2022) https://doi.org/10.1117/12.2613619
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Conference Poster

Abstract

In order to achieve pattern shrinkage of the memory device, the manufacturing process is getting more complicated and the production period is getting longer. Therefore, the methodology of predicting fab-out electrical die sorting (EDS) test results from in-fab metrology (CD, Optical CD, Thickness, etc.) data is becoming increasingly important. In this study, we propose a novel methodology to improve the fab-out EDS prediction of memory device with in-fab metrology data. Since fab-out EDS results of memory device are binary data consisting of pass or fail at the chip level, indices based on binary classification are suitable for verifying correlation between in-fab metrology data to fab-out EDS results. However, in memory device production, the number of pass chips is much larger than that of fail chips. So in this case, the data imbalance of the pass/fail chip ratio in memory semiconductor production can lead to distortion of binary classification indices such as accuracy, precision, recall, and F-score. We modified the accuracy equation of binary classification to compensate for distortion of binary classification indices due to data imbalance, allowing us to determine chip-level in-fab production specifications (specs) more accurately. We also confirm that the fab-out EDS prediction error has decreased 37.5% when using new in-fab production specs determined by our effective accuracy equation.

Conference Presentation

Citation Download Citation

Heeyoon Han, Wansik Nam, Hyeungcheol Mun, Sangbong Lee, Sungyoon Ryu, and Younghoon Sohn "Improved fab-out EDS prediction of memory device using effective accuracy equation", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 120531S (26 May 2022); https://doi.org/10.1117/12.2613619

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