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31 May 2022 Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels
R. Sen, N. Vast, J. Sjakste
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Proceedings Volume 12132, Advances in Ultrafast Condensed Phase Physics III; 1213204 (2022) https://doi.org/10.1117/12.2621174
Event: SPIE Photonics Europe, 2022, Strasbourg, France
Abstract
In this work, we revisit the DFT-based results for the electron-phonon scattering in highly excited silicon. Using state-of-the-art ab initio methods, we examine the main scattering channels which contribute to the total electron-phonon scattering rate and to the energy loss rate of photoexcited electrons in silicon as well as their temperature dependence. Both temperature dependence and the main scattering channels are shown to strongly differ for the total electron-phonon scattering rate and for the energy loss rate of photoexcited electrons. Whereas the total electron-phonon scattering rate increases strongly with temperature, the temperature dependence of the energy loss rate is negligible. Also, while acoustic phonons dominate the total electron-phonon scattering rate at 300 K, the main contribution to the energy loss rate comes from optical modes.
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R. Sen, N. Vast, and J. Sjakste "Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels", Proc. SPIE 12132, Advances in Ultrafast Condensed Phase Physics III, 1213204 (31 May 2022); https://doi.org/10.1117/12.2621174
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KEYWORDS
Scattering
Phonons
Silicon
Energy transfer
Semiconductors
Solids
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